byv27-50, byv27-100, byv27-150, byv27-200 www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 1 document number: 86042 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultra-fast avalanche sinterglass diode mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? controlled avalanche characteristic ? low forward voltage ? ultra fast recovery time ? glass passivated junction ? hermetically sealed package ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? very fast rectification diode e.g. for switch mode power supply ? ? ? ? 949539 ordering information (example) device name ordering code tape d units minimum order quantity byv27-200 byv27-200-tr 5000 per 10" tape and reel 25 000 byv27-200 byv27-200-tap 5000 per ammopack 25 000 parts table part type differentiation package byv27-50 v r = 50 v; i f(av) = 2 a sod-57 byv27-100 v r = 100 v; i f(av) = 2 a sod-57 byv27-150 v r = 150 v; i f(av) = 2 a sod-57 byv27-200 v r = 200 v; i f(av) = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit peak reverse voltage, non repetitive see electrical characteristics byv27-50 v rsm 55 v byv27-100 v rsm 110 v byv27-150 v rsm 165 v byv27-200 v rsm 220 v reverse voltage = repetitive peak reverse voltage see electrical characteristics byv27-50 v r = v rrm 50 v byv27-100 v r = v rrm 100 v byv27-150 v r = v rrm 150 v byv27-200 v r = v rrm 200 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a repetitive peak forward current i frm 15 a average forward current i f(av) 2a pulse energy in avalanche mode, non repeti tive (inductive load switch off) i (br)r = 1 a, t j = 175 c e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w
byv27-50, byv27-100, byv27-150, byv27-200 www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 2 document number: 86042 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - typ. thermal re sistance vs. lead length fig. 2 - forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 3a v f - - 1.07 v i f = 3 a, t j = 175 c v f - - 0.88 v reverse current v r = v rrm i r --1a v rsm i r - - 100 a v r = v rrm , t j = 165 c i r - - 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 25 ns 0 5 10 15 20 25 30 0 20 40 60 80 120 r thja - therm.re s i s t.junction/ambient (k/w) l - lead length (mm) 949526 100 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 v f - forward voltage (v) 16382 t j = 175 c t j = 25 c 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 16383 i fav - average forward current (a) v r = v rrm half s ine wave r thja = 45 k/w l = 10 mm r thja = 100 k/w pcb: d = 25 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16384 v r = v rrm i r - rever s e current (a)
byv27-50, byv27-100, byv27-150, byv27-200 www.vishay.com vishay semiconductors rev. 1.8, 04-sep-12 3 document number: 86042 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - max. reverse power dissipation vs. junction temperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 16385 p r - rever s e power di ss ipation (mw) t j - junction temperature (c) v r = v rrm p r - limit at 100 % v r p r - limit at 80 % v r 0 20 40 60 80 100 0.1 1 10 100 v r - rever s e voltage (v) 16386 c d - diode capacitance (pf) f = 1 mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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